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1 – 3 of 3Zulkifli Azman, Nafarizal Nayan, Megat Muhammad Ikhsan Megat Hasnan, Nurafiqah Othman, Anis Suhaili Bakri, Ahmad Shuhaimi Abu Bakar, Mohamad Hafiz Mamat and Mohd Zamri Mohd Yusop
This study aims to investigate the effect of temperature applied at the initial deposition of Aluminium Nitride (AlN) thin-film on a silicon substrate by high-power impulse…
Abstract
Purpose
This study aims to investigate the effect of temperature applied at the initial deposition of Aluminium Nitride (AlN) thin-film on a silicon substrate by high-power impulse magnetron sputtering (HiPIMS) technique.
Design/methodology/approach
HiPIMS system was used to deposit AlN thin film at a low output power of 200 W. The ramping temperature was introduced to substrate from room temperature to maximum 100°Cat the initial deposition of thin-film, and the result was compared to thin-film sputtered with no additional heat. For the heat assistance AlN deposition, the substrate was let to cool down to room temperature for the remaining deposition time. The thin-films were characterized by X-ray diffraction (XRD) and atomic force microscope (AFM) while the MIS Schottky diode characteristic investigated through current-voltage response by a two-point probe method.
Findings
The XRD pattern shows significant improvement of the strong peak of the c-axis (002) preferred orientation of the AlN thin-film. The peak was observed narrowed with temperature assisted where FWHM calculated at 0.35° compared to FWHM of AlN thin film deposited at room temperature at around 0.59°. The degree of crystallinity of bulk thin film was improved by 28% with temperature assisted. The AFM images show significant improvement as low surface roughness achieved at around 0.7 nm for temperature assisted sample compares to 3 nm with no heat applied.
Originality/value
The small amount of heat introduced to the substrate has significantly improved the growth of the c-axis AlN thin film, and this method is favorable in the deposition of the high-quality thin film at the low-temperature process.
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Tze Huey Tam, Muhammad Zulkarnain Abdul Rahman, Sobri Harun, Shamsuddin Shahid, Sophal Try, Mohamad Hidayat Jamal, Zamri Ismail, Khamarrul Azahari Razak, Mohd Khairolden Ghani and Yusrin Faiz Abdul Wahab
The present study aims to evaluate the effect of climate change on the flood hazard potential in the Kelantan River Basin using current and future scenarios.
Abstract
Purpose
The present study aims to evaluate the effect of climate change on the flood hazard potential in the Kelantan River Basin using current and future scenarios.
Design/methodology/approach
The intensity-duration-frequency (IDF) was used to estimate the current 50- and 100-year return period 24-h design rainfall, and the climate change factor (CCF) was used to compute the future design rainfall. The CCF was calculated from the rainfall projections of two global climate models, CGCM1 and CCSM3, with different pre-processing steps applied to each. The IDF data were used in the rainfall-runoff-inundation model to simulate current and future flood inundation scenarios.
Findings
The estimated CCF values demonstrate a contrast, whereby each station had a CCF value greater than one for CGCM1, while some stations had a CCF value of less than one for CCSM3. Therefore, CGCM1 projected an aggravation and CCSM3 a reduction of flood hazard for future scenarios. The study reveals that topography plays an essential role in calculating the CCF.
Originality/value
To the best of the author’s knowledge, this is the first study to examine flood projections in the Kelantan River Basin. It is, therefore, hoped that these results could benefit local managers and authorities by enabling them to make informed decisions regarding flood risk mitigation in a climate change scenario.
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